Surface phases of GaAs and InAs „001... found in the metalorganic vapor-phase epitaxy environment
نویسندگان
چکیده
We have characterized the ~234! and ~432! reconstructions of GaAs and InAs ~001! that are present in a metalorganic vapor-phase epitaxy ~MOVPE! reactor. Scanning tunneling micrographs show that these surfaces are terminated with arsenic and gallium ~or indium! dimers. The ~234! dimer row exhibits a mottled appearance, which is ascribed to the adsorption of alkyl groups on some of the sites. On the ~432!, ,10% of the surface is covered with small ~234! islands. These results show that, in the MOVPE environment, the GaAs and InAs surface structures are nearly the same as those found in ultrahigh vacuum molecular beam epitaxy. © 1998 American Institute of Physics. @S0003-6951~98!02235-9#
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